US 11,740,073 B2
Method for measuring CD using scanning electron microscope
Jooho Kim, Seoul (KR); Donyun Kim, Seoul (KR); Yunhyoung Nam, Seoul (KR); Seungjin Lee, Yongin-Si (KR); and Dawoon Choi, Hwaseong-Si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed on Aug. 31, 2021, as Appl. No. 17/463,499.
Claims priority of application No. 10-2021-0035249 (KR), filed on Mar. 18, 2021.
Prior Publication US 2022/0299315 A1, Sep. 22, 2022
Int. Cl. G01B 11/24 (2006.01); H01J 37/28 (2006.01); G06T 7/60 (2017.01); G06V 10/26 (2022.01)
CPC G01B 11/24 (2013.01) [G06T 7/60 (2013.01); G06V 10/267 (2022.01); H01J 37/28 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/2803 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of measuring a critical dimension (CD), comprising the steps of:
forming a plurality of patterns in a substrate;
creating first to n-th images, wherein n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, wherein the first to n-th areas do not overlap with each other, wherein each of the first to n-th areas includes at least some of the plurality of patterns;
creating a merged image from the first to n-th images; and
measuring a CD of a measurement object from the plurality of patterns using the merged image,
wherein the merged image has a higher resolution than each of the first to n-th images.