CPC C30B 33/02 (2013.01) [C01F 5/02 (2013.01); C30B 29/16 (2013.01); C01P 2002/77 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01)] | 9 Claims |
1. A method for increasing the conductivity of an oxide with crystal structure belonging to the 4/m 32/m point group comprising:
(a) providing a single crystal metal oxide with crystal structure belonging to 4/m 32/m point group,
(b) contacting the single crystal metal oxide with crystal structure belonging to 4/m 32/m point group with nitrogen gas at a temperature in the range of at least ambient temperature to at most 80° C. thereby providing a first nitrogen contacted metal oxide;
(c) contacting the first nitrogen contacted metal oxide with oxygen gas at a temperature in the range of at least ambient temperature to at most 80° C. thereby providing a first oxygen contacted metal oxide;
(d) contacting the first oxygen contacted metal oxide with nitrogen gas at a temperature in the range of at least ambient temperature to at most 80° C. thereby providing a second nitrogen contacted metal oxide;
(e) contacting the second nitrogen contacted metal oxide with oxygen gas at a temperature in the range of at least 40° C. to at most 80° C. thereby providing a second oxygen contacted metal oxide; and
(f) contacting the second oxygen contacted metal oxide with nitrogen gas at a temperature in the range of at least 40° C. to at most 80° C. thereby providing an increased conductivity crystalline metal oxide with a crystal structure belonging to 4/m 32/m point group oxide.
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