US 11,738,539 B2
Bonded substrate including polycrystalline diamond film
Wen-Qing Xu, Medfield, MA (US); Di Lan, Tampa, FL (US); and Christopher Koeppen, New Hope, PA (US)
Assigned to II-VI DELAWARE, INC, Wilmington, DE (US)
Filed by II-VI Delaware, Inc, Wilmington, DE (US)
Filed on Apr. 23, 2021, as Appl. No. 17/302,081.
Application 17/302,081 is a continuation in part of application No. 16/874,164, filed on May 14, 2020, granted, now 11,362,640.
Application 16/874,164 is a continuation in part of application No. 16/037,499, filed on Jul. 17, 2018, granted, now 11,121,696.
Claims priority of provisional application 63/014,163, filed on Apr. 23, 2020.
Prior Publication US 2021/0283881 A1, Sep. 16, 2021
Int. Cl. B32B 9/00 (2006.01); B32B 38/00 (2006.01); B32B 37/18 (2006.01)
CPC B32B 9/007 (2013.01) [B32B 37/18 (2013.01); B32B 38/0008 (2013.01); B32B 2038/0064 (2013.01); B32B 2310/14 (2013.01); B32B 2551/08 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A wafer comprising:
a layer containing silicon;
a layer of polycrystalline diamond deposited on the layer containing silicon;
a polished silicon layer on the layer of polycrystalline diamond; and
a bow-compensation layer for reducing wafer-bow of the layer containing silicon and the layer of polycrystalline diamond; and
wherein the layer containing silicon is located between the layer of polycrystalline diamond and the bow-compensation layer, and
wherein the layer of polycrystalline diamond is located between the polished silicon layer and the layer containing silicon.