US 11,737,722 B2
X-ray detector having fabrication fault tolerant structure and fabrication method thereof
Jin Woong Jeong, Gyeonggi-do (KR); Ho Seok Lee, Gyeonggi-do (KR); Chang Hyeuk Kim, Apex, NC (US); and Seungman Yun, Durham, NC (US)
Assigned to RAYENCE Co., Ltd., Gyeonggi-do (KR); VATECH EWOO Holdings Co., Ltd., Gyeonggi-do (KR); and Qpix solutions Inc., Durham, NC (US)
Filed by RAYENCE Co., Ltd., Gyeonggi-do (KR); VATECH EWOO Holdings Co., Ltd., Gyeonggi-do (KR); and Qpix solutions Inc., Durham, NC (US)
Filed on Jun. 10, 2022, as Appl. No. 17/837,838.
Claims priority of provisional application 63/209,254, filed on Jun. 10, 2021.
Prior Publication US 2022/0395249 A1, Dec. 15, 2022
Int. Cl. A61B 6/00 (2006.01); G01T 1/16 (2006.01); B41F 16/00 (2006.01)
CPC A61B 6/584 (2013.01) [G01T 1/16 (2013.01); B41F 16/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An X-ray detector comprising:
a photodiode layer formed on a base substrate within a pixel area and comprises a plurality of photodiode pixel units;
a dummy layer formed on the base substrate within a peripheral area and insulated from the plurality of photodiode pixel units;
a plurality of pixel driving integrated chips mounted on the photodiode layer;
a plurality of primary column and row integrated chips printed on the dummy layer; and
metal lines mounted on the pixel driving integrated chips and primary column and row integrated chips for coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements,
wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.