| CPC C23C 28/02 (2013.01) [C23C 14/3407 (2013.01); C23C 16/45525 (2013.01)] | 28 Claims |
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1. A physico-chemical method for depositing a conformal layer on a substrate, comprising:
providing a substrate in a reactor;
heating the substrate to a temperature of about 100° C. to about 650° C.;
maintaining the substrate at about 100° C. to about 650° C.,
providing a sputtering target in the reactor;
introducing a chemical species into the reactor in the vapor phase above the substrate and/or on a substrate surface;
wherein the chemical species is selected from the group consisting of diolefins, carbon monoxide, nitrogen monoxide, tertiary phosphines, tertiary amines, diketonates, hydrazine, dimethylhydrazine, and hydrazoic acid;
ejecting single atoms or multi-atom clusters comprising up to three atoms from the sputtering target;
causing the ejected single atoms or multi-atom clusters to interact with the chemical species in the vapor phase above the substrate and/or on the substrate surface;
wherein the interaction forms a complex in the vapor phase and/or on the substrate surface;
wherein the formation of the complex is due to or enabled by an energy transfer process, a remote or direct plasma application process, electron ionization, oxidation, and/or reduction;
wherein the complex has a sticking coefficient S and a probability of desorption Pd whose sum is about 0.01 to about 0.9; and
forming a conformal layer from the complex on the substrate surface, wherein the conformal layer has the same elemental composition as the sputtering target.
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