US 12,069,972 B2
Semiconductor device and manufacturing method of semiconductor device
Ji Sun Han, Icheon (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Aug. 2, 2021, as Appl. No. 17/391,858.
Claims priority of application No. 10-2021-0020127 (KR), filed on Feb. 15, 2021.
Prior Publication US 2022/0263020 A1, Aug. 18, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 63/84 (2023.02); H10N 70/026 (2023.02); H10N 70/231 (2023.02); H10N 70/821 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode including a carbon layer;
a second electrode;
a variable resistance layer interposed between the first electrode and the second electrode; and
a barrier layer interposed between the first electrode and the variable resistance layer, the barrier layer including nitrogen and carbon,
wherein the barrier layer is in direct physical contact with the variable resistance layer, and
wherein a concentration of the nitrogen in the barrier layer is equal to or higher than that of the carbon in the barrier layer.