US 12,069,971 B2
Switching layer scheme to enhance RRAM performance
Hai-Dang Trinh, Hsinchu (TW); Cheng-Yuan Tsai, Chu-Pei (TW); Hsing-Lien Lin, Hsin-Chu (TW); and Wen-Ting Chu, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 8, 2023, as Appl. No. 18/313,475.
Application 18/313,475 is a continuation of application No. 17/834,115, filed on Jun. 7, 2022, granted, now 11,683,999.
Application 17/834,115 is a continuation of application No. 17/022,413, filed on Sep. 16, 2020, granted, now 11,362,271, issued on Jun. 14, 2022.
Application 17/022,413 is a continuation of application No. 16/655,478, filed on Oct. 17, 2019, granted, now 10,811,600, issued on Oct. 20, 2020.
Application 16/655,478 is a continuation of application No. 16/211,723, filed on Dec. 6, 2018, granted, now 10,505,107, issued on Dec. 10, 2019.
Application 16/211,723 is a continuation of application No. 15/633,101, filed on Jun. 26, 2017, granted, now 10,164,182, issued on Dec. 25, 2018.
Prior Publication US 2023/0276721 A1, Aug. 31, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); G06F 12/02 (2006.01); H10N 70/20 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/801 (2023.02) [G06F 12/0246 (2013.01); H10N 70/021 (2023.02); H10N 70/061 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/881 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); H10B 63/30 (2023.02); H10N 70/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A resistive random access memory (RRAM) device, comprising:
a first electrode over a substrate;
a second electrode over the substrate; and
a data storage structure disposed between the first electrode and the second electrode and comprising a first metal and a second metal, wherein the first metal has a peak concentration at a first distance from the first electrode and the second metal has a peak concentration at a second distance from the first electrode, the first distance being different than the second distance.