US 12,069,961 B2
Magnetic tunnel junction (MTJ) element and its fabrication process
Ya-Ling Lee, Hsinchu (TW); Tsann Lin, Hsinchu (TW); and Han-Jong Chia, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/331,154.
Application 18/331,154 is a division of application No. 17/070,426, filed on Oct. 14, 2020, granted, now 11,716,909.
Prior Publication US 2023/0337547 A1, Oct. 19, 2023
Int. Cl. H10N 50/10 (2023.01); G01R 33/09 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G01R 33/093 (2013.01); G01R 33/098 (2013.01); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a magnetic tunnel junction (MTJ) element, comprising:
forming a first ferromagnetic layer;
forming a tunnel barrier layer over the first ferromagnetic layer;
forming a second ferromagnetic layer over the tunnel barrier layer;
forming a cap layer over the second ferromagnetic layer,
wherein the cap layer comprises an amorphous, nonmagnetic film of a form X-Z, where X is Fe or Co and Z is Hf, Y, or Zr.