US 12,069,959 B2
Magnetic memory device and manufacturing method of magnetic memory device
Kuniaki Sugiura, Seoul (KR)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 11, 2021, as Appl. No. 17/198,522.
Claims priority of application No. 2020-156141 (JP), filed on Sep. 17, 2020.
Prior Publication US 2022/0085282 A1, Mar. 17, 2022
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a first magnetoresistance effect element provided above a substrate; and
a first switching element member and a first conductor, each provided above the first magnetoresistance effect element,
wherein:
the first switching element member includes a first portion in contact with a lower surface of the first conductor directly above the first magnetoresistance effect element,
an area of a lower surface of the first switching element member is smaller than a cross-sectional area of the first switching element member along the lower surface of the first conductor,
the first switching element member further includes a second portion in contact with a side surface of the first conductor,
an area of the lower surface of the first conductor is smaller than the cross-sectional area, and
the area of the lower surface of the first conductor is smaller than an area of an upper surface of the first magnetoresistance effect element.