CPC H10K 10/481 (2023.02) [H10K 10/486 (2023.02); H10K 10/84 (2023.02); H10K 19/10 (2023.02); H10K 71/60 (2023.02); H10K 85/221 (2023.02)] | 20 Claims |
1. A method of forming a gate-all-around field effect transistor (“GAA FET”), the method comprising:
forming a fin structure over a substrate, the fin structure including a plurality of carbon nanotubes (“CNT”) each surrounded by a support layer;
releasing first portions of CNTs in the fin structure;
forming a gate structure around the first portions of the CNTs;
releasing second regions of the CNTs, the second portions extending outward from the first portions of the CNTs;
forming an inner spacer structure at least partially surrounding the second portions; and
forming a source or drain structure in contact with the second portions, the inner spacer structure between the source or drain structure and the gate structure.
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