CPC H10B 63/82 (2023.02) [G06N 3/063 (2013.01); H10B 63/30 (2023.02); H10N 70/253 (2023.02); H10N 70/821 (2023.02); H10N 70/8613 (2023.02)] | 15 Claims |
1. A synapse crossbar array device pre-configured to recognize a pattern, the synapse crossbar array device comprising:
a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs); and
a plurality of IGZO resistive synapses, each IGZO resistive synapse comprising an IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines;
wherein the first electrical contact and the second electrical contact are disposed on the IGZO resistive layer of a corresponding IGZO resistive synapse, and each IGZO resistive synapse having pre-established, factory fabricated dimension and resistivity corresponding to a synapse weight value specific to the pattern such that the synapse crossbar array device is pre-configured to recognize the pattern using the plurality of IGZO resistive synapses,
wherein the synapse weight value is configured to be non-adjustable during a use of the synapse crossbar array device,
wherein the synapse crossbar array device is fully transparent to visible light and is integrated in a display.
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