US 12,069,870 B2
Synapse array
Viorel-Georgel Dumitru, Ploiesti (RO); Cristina Besleaga Stan, Bucharest (RO); Alin Velea, Bucharest (RO); and Aurelian-Catalin Galca, Magurele (RO)
Assigned to CYBERSWARM, INC., San Mateo, CA (US)
Filed by CYBERSWARM, INC., San Mateo, CA (US)
Filed on Jun. 5, 2019, as Appl. No. 16/431,885.
Claims priority of provisional application 62/683,345, filed on Jun. 11, 2018.
Prior Publication US 2019/0378878 A1, Dec. 12, 2019
Int. Cl. H10B 63/00 (2023.01); G06N 3/063 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/82 (2023.02) [G06N 3/063 (2013.01); H10B 63/30 (2023.02); H10N 70/253 (2023.02); H10N 70/821 (2023.02); H10N 70/8613 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A synapse crossbar array device pre-configured to recognize a pattern, the synapse crossbar array device comprising:
a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs); and
a plurality of IGZO resistive synapses, each IGZO resistive synapse comprising an IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines;
wherein the first electrical contact and the second electrical contact are disposed on the IGZO resistive layer of a corresponding IGZO resistive synapse, and each IGZO resistive synapse having pre-established, factory fabricated dimension and resistivity corresponding to a synapse weight value specific to the pattern such that the synapse crossbar array device is pre-configured to recognize the pattern using the plurality of IGZO resistive synapses,
wherein the synapse weight value is configured to be non-adjustable during a use of the synapse crossbar array device,
wherein the synapse crossbar array device is fully transparent to visible light and is integrated in a display.