US 12,069,865 B2
Semiconductor devices and methods of manufacture
Bo-Feng Young, Taipei (TW); Sai-Hooi Yeong, Zhubei (TW); Chi On Chui, Hsinchu (TW); and Yu-Ming Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 3, 2022, as Appl. No. 17/567,586.
Application 17/567,586 is a continuation of application No. 16/945,103, filed on Jul. 31, 2020, granted, now 11,217,494.
Prior Publication US 2022/0122887 A1, Apr. 21, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 51/30 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 43/20 (2023.01); H10B 43/30 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 99/00 (2023.01)
CPC H10B 51/30 (2023.02) [H01L 21/02565 (2013.01); H01L 21/02603 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 29/0673 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/78391 (2014.09); H01L 29/78696 (2013.01); H10B 43/20 (2023.02); H10B 43/30 (2023.02); H10B 51/20 (2023.02); H10B 99/00 (2023.02)] 20 Claims
OG exemplary drawing
 
8. A semiconductor device comprising:
a dummy channel core over a semiconductor substrate;
a semiconductor material over and surrounding the dummy channel core;
a memory film layer over the semiconductor material;
a conductive structure over the memory film layer; and
a conductive material adjacent to the semiconductor material.