CPC H10B 41/27 (2023.02) [H10B 51/00 (2023.02); H10B 41/10 (2023.02)] | 20 Claims |
1. A method of forming an electronic device comprising:
forming alternating first materials and second materials on a base material, the first materials and the second materials formulated to be removable at different temperatures;
forming a sacrificial material in a pillar opening extending through the alternating first materials and second materials;
removing the first materials to form first spaces adjacent to the second materials, the first materials formulated to be in a liquid phase or in a gas phase at a first removal temperature;
forming stack materials in the first spaces;
removing the second materials to form second spaces adjacent to the stack materials, the second materials formulated to be in a liquid phase or in a gas phase at a second removal temperature;
forming other stack materials in the second spaces;
removing the sacrificial material from the pillar opening; and
forming cell materials in the pillar opening.
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