US 12,068,734 B2
Method for forming an aluminum nitride layer
Maximilian Schiek, Puchheim (DE); Christian Ceranski, Munich (DE); and Günter Scheinbacher, Baldham (DE)
Assigned to RF360 Singapore Pte. Ltd., Singapore (SG)
Appl. No. 16/976,886
Filed by RF360 Singapore Pte. Ltd., Singapore (SG)
PCT Filed Feb. 19, 2019, PCT No. PCT/EP2019/054111
§ 371(c)(1), (2) Date Aug. 31, 2020,
PCT Pub. No. WO2019/166285, PCT Pub. Date Sep. 6, 2019.
Claims priority of application No. 102018104712.6 (DE), filed on Mar. 1, 2018.
Prior Publication US 2021/0006220 A1, Jan. 7, 2021
Int. Cl. H03H 3/04 (2006.01); H03H 9/02 (2006.01); H03H 9/08 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H10N 30/079 (2023.01); H03H 3/02 (2006.01)
CPC H03H 3/04 (2013.01) [H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/08 (2013.01); H03H 9/13 (2013.01); H03H 9/175 (2013.01); H03H 9/176 (2013.01); H10N 30/079 (2023.02); H03H 2003/025 (2013.01); H03H 2003/0407 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for forming an aluminum nitride layer, comprising the steps of:
forming a metal nitride layer on a substrate;
patterning the metal nitride layer to form a residual metal nitride layer and to expose a portion of the substrate;
forming a metal layer on the exposed portion of the substrate; and
forming an aluminum nitride on the metal layer and above the residual metal nitride layer, wherein the aluminum nitride formed on the metal layer possesses a piezoelectric property and the aluminum nitride formed on the residual metal nitride layer possesses no piezoelectric property.