US 12,068,721 B2
Monolithic microwave integrated circuits tolerant to electrical overstress
Srivatsan Parthasarathy, Acton, MA (US); Javier A. Salcedo, North Billerica, MA (US); and Miguel Chanca, Valencia (ES)
Assigned to Analog Devices International Unlimited Company, Limerick (IE)
Filed by Analog Devices International Unlimited Company, Limerick (IE)
Filed on Sep. 7, 2022, as Appl. No. 17/930,172.
Application 17/930,172 is a division of application No. 16/840,097, filed on Apr. 3, 2020, granted, now 11,469,717.
Claims priority of provisional application 62/843,152, filed on May 3, 2019.
Prior Publication US 2022/0416731 A1, Dec. 29, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H03F 1/02 (2006.01); H03F 1/52 (2006.01); H03F 3/195 (2006.01)
CPC H03F 1/523 (2013.01) [H01L 27/0288 (2013.01); H01L 27/0629 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H03F 1/0211 (2013.01); H03F 3/195 (2013.01); H03F 2200/06 (2013.01); H03F 2200/294 (2013.01); H03F 2200/426 (2013.01); H03F 2200/451 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A monolithic microwave integrated circuit (MMIC) with integrated electrical overstress protection, the MMIC comprising:
a radio frequency (RF) signal pad configured to receive an RF signal; and
an RF circuit coupled to the RF signal pad, the RF circuit comprising a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers.