US 12,068,583 B2
Surface emitting laser device and light emitting device including the same
Keun Uk Park, Seoul (KR); and Jeong Sik Lee, Seoul (KR)
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
Appl. No. 17/290,086
Filed by SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
PCT Filed Oct. 29, 2019, PCT No. PCT/KR2019/014379
§ 371(c)(1), (2) Date Apr. 29, 2021,
PCT Pub. No. WO2020/091383, PCT Pub. Date May 7, 2020.
Claims priority of application No. 10-2018-0131807 (KR), filed on Oct. 31, 2018.
Prior Publication US 2021/0399528 A1, Dec. 23, 2021
Int. Cl. H01S 5/343 (2006.01); H01S 5/183 (2006.01); H01S 5/34 (2006.01)
CPC H01S 5/34353 (2013.01) [H01S 5/18361 (2013.01); H01S 5/3408 (2013.01); H01S 5/3425 (2013.01); H01S 5/34313 (2013.01); H01S 5/34366 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A surface emitting laser device comprising:
a first reflective layer;
an active layer disposed on the first reflective layer;
an aperture region disposed on the active layer and including an aperture and an insulating region; and
a second reflective layer disposed on the aperture region,
wherein the active layer includes a plurality of quantum wells interleaved with a plurality of quantum barriers, and an intermediate layer disposed between each quantum well-quantum barrier pair of the plurality of quantum wells and quantum barriers,
wherein the quantum wells and the quantum barriers are composed of a ternary material respectively,
wherein the intermediate layer is composed of a binary material, and
wherein the second reflective layer comprises:
a first AlGaAs-based layer including Alx1Ga(1-x1)As (where 0<X1<0.2);
a second AlGaAs-based layer disposed on the first AlGaAs-based layer and including Alx2Ga(1-x2)As (where, 0.8<X2<1.0); and
an AlGaAs-based transition region disposed between the first AlGaAs-based layer and the second AlGaAs-based layer.