US 12,068,580 B2
Oxide spacer HCG VCSELS and fabrication methods
Constance J. Chang-Hasnain, Palo Alto, CA (US); Kevin T. Cook, Berkeley, CA (US); Jipeng Qi, El Cerrito, CA (US); and Jiaxing Wang, Albany, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed by THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed on Nov. 5, 2020, as Appl. No. 17/090,773.
Application 17/090,773 is a continuation of application No. PCT/US2019/031686, filed on May 10, 2019.
Claims priority of provisional application 62/670,071, filed on May 11, 2018.
Prior Publication US 2021/0135429 A1, May 6, 2021
Int. Cl. H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/20 (2006.01); H01S 5/42 (2006.01); H01S 5/026 (2006.01); H01S 5/34 (2006.01)
CPC H01S 5/18311 (2013.01) [H01S 5/18316 (2013.01); H01S 5/18358 (2013.01); H01S 5/18361 (2013.01); H01S 5/18363 (2013.01); H01S 5/18386 (2013.01); H01S 5/2081 (2013.01); H01S 5/423 (2013.01); H01S 5/026 (2013.01); H01S 5/18341 (2013.01); H01S 5/18355 (2013.01); H01S 5/34 (2013.01)] 26 Claims
OG exemplary drawing
 
1. An oxide-spacer high-contrast grating (HCG) reflector apparatus formed as part of an epitaxial structure, comprising:
(a) a grating of high-refractive index semiconductor formed from patterning a high contrast grating (HCG) layer disposed over an oxidizable spacer layer;
(b) an area of low-refractive index oxide formed locally within said oxidizable spacer layer beneath the grating, with the combination forming a HCG reflector apparatus; and
(c) wherein said low-refractive index oxide is formed locally within said oxidizable spacer layer by performing oxidation of the oxidizable spacer layer through the grating of the HCG layer, and wherein the material of said HCG layer is selected to retain a high refractive index through this oxidation process.