CPC H01M 4/386 (2013.01) [H01M 4/0402 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/80 (2013.01)] | 7 Claims |
1. A structure comprising:
a porous substrate layer positioned along a metal layer having a given stress value and a first thickness corresponding to controlled spalling, wherein the porous substrate layer is made of p-type doped silicon, wherein the first thickness of the metal layer is less than a second thickness associated with spontaneous spalling of the porous substrate layer, wherein at least a portion of the porous substrate layer is spalled and at least a portion of the porous substrate layer is non-spalled, and wherein the non-spalled portion of the porous substrate layer contains fewer lithium ions than the spalled portion of the porous substrate layer;
a handle layer positioned below the metal layer, wherein the handle layer is configured to initiate a spalling mode fracture in the porous substrate layer based on applying a force on the handle layer;
an electrolyte layer positioned along the porous substrate layer; and
a cathode positioned on top of the electrolyte layer, wherein the electrolyte layer has a third thickness configured to provide ion conductivity between the cathode and the porous substrate layer without holes in the electrolyte layer, and wherein the electrolyte layer separates the cathode from the porous substrate layer.
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