US 12,068,431 B2
Single-photon source and method of outputting single photon
Fumiya Nagasawa, Kyoto (JP); Hiroshi Sekiguchi, Kyoto (JP); Yoshinori Miyamae, Kyoto (JP); and Koji Taniuchi, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 27, 2021, as Appl. No. 17/486,701.
Application 17/486,701 is a continuation of application No. PCT/JP2020/013966, filed on Mar. 27, 2020.
Claims priority of application No. 2019-070604 (JP), filed on Apr. 2, 2019.
Prior Publication US 2022/0013686 A1, Jan. 13, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01S 5/343 (2006.01); B82Y 20/00 (2011.01); H04B 10/70 (2013.01)
CPC H01L 33/06 (2013.01) [H01L 33/105 (2013.01); H01S 5/343 (2013.01); B82Y 20/00 (2013.01); H04B 10/70 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A single-photon source comprising:
a substrate of a wide-bandgap semiconductor provided with a light-emission region including only one target point defect;
a cover mask arranged on a main surface of the substrate and having an opening to which the light-emission region in the substrate is exposed; and
an excitation system configured to shift an electron in a defect-ground state to an excited state at the point defect in the light-emission region,
wherein a single photon released from the point defect in the light-emission region when the electron in the excited state is shifted to the ground state is output through the opening in the cover mask, and
the excitation system includes a pair of main electrodes provided on the main surface of the substrate to interpose the light-emission region therebetween so as to excite the electron at the point defect by electrical energy generated between the respective main electrodes.