US 12,068,419 B2
High-voltage fast-avalanche diode
Amit Kesar, Yavne (IL); Gil Atar, Yavne (IL); Shoval Zoran, Yavne (IL); and Doron Cohen-Elias, Yavne (IL)
Assigned to Soreq Nuclear Research Center, Nahal Soreq (IL)
Appl. No. 17/785,539
Filed by Soreq Nuclear Research Center, Yavne (IL)
PCT Filed Oct. 21, 2020, PCT No. PCT/IB2020/059900
§ 371(c)(1), (2) Date Jun. 15, 2022,
PCT Pub. No. WO2021/123943, PCT Pub. Date Jun. 24, 2021.
Claims priority of provisional application 62/948,944, filed on Dec. 17, 2019.
Prior Publication US 2023/0040734 A1, Feb. 9, 2023
Int. Cl. H01L 29/864 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/864 (2013.01) [H01L 29/66113 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A diode device comprising:
a diode comprising a silicon-avalanche semiconductor switch that has an active region comprising a 525 micron thick, 10 kΩ-cm, n-type, float zone wafer,
wherein a cathode of said diode is connected to ground via a 1 pF peaking capacitor, and also to a 6-kV, 1-ns pulsed-power generator via a 200 pF DC-block capacitor and a 20 nH coil.