US 12,068,417 B2
Semiconductor device and method for manufacturing semiconductor device
Daisuke Matsubayashi, Yokohama (JP); Yuichi Yanagisawa, Atsugi (JP); and Masahiro Takahashi, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Sep. 15, 2023, as Appl. No. 18/368,630.
Application 18/368,630 is a continuation of application No. 17/257,921, granted, now 11,804,551, previously published as PCT/IB2019/056049, filed on Jul. 16, 2019.
Claims priority of application No. 2018-141425 (JP), filed on Jul. 27, 2018.
Prior Publication US 2024/0113226 A1, Apr. 4, 2024
Int. Cl. H01L 29/786 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/1095 (2013.01); H01L 29/78696 (2013.01)] 2 Claims
OG exemplary drawing
 
2. A semiconductor device comprising:
first and second oxides;
first to fourth insulators;
first to third conductors; and
first and second oxide insulators,
wherein the first conductor is over the first oxide,
wherein the second conductor and the third conductor are over the first oxide with the first conductor therebetween,
wherein the first oxide insulator is over the second conductor,
wherein the second oxide insulator is over the third conductor,
wherein the second oxide is in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide,
wherein the first insulator is between the first conductor and the second oxide,
wherein the first conductor, the first insulator, and the second oxide comprise a region overlapping with the first oxide insulator and the second oxide insulator,
wherein the fourth insulator is in contact with a side surface of the second conductor and the side surface of the first oxide,
wherein the fourth insulator is in contact with a side surface of the third conductor and the side surface of the first oxide,
wherein the fourth insulator is over the first oxide insulator, the second oxide insulator, and the first conductor,
wherein the first oxide insulator is isolated from the first conductor, the second conductor, the first insulator, and the first oxide by the second insulator, the second oxide, and the fourth insulator,
wherein the second oxide insulator is isolated from the first conductor, the third conductor, the first insulator, and the first oxide by the third insulator, the second oxide, and the fourth insulator, and
wherein the fourth insulator diffuses less oxygen than the first oxide insulator and the second oxide insulator.