US 12,068,398 B2
Fin field-effect transistor with void and method of forming the same
Hsu Ming Hsiao, Hsinchu (TW); Ming-Jhe Sie, Taipei (TW); Hsiu-Hao Tsao, Taichung (TW); Hong Pin Lin, Hsinchu (TW); Che-fu Chen, Taipei (TW); An Chyi Wei, Hsinchu (TW); and Yi-Jen Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 25, 2023, as Appl. No. 18/306,769.
Application 18/306,769 is a continuation of application No. 17/205,120, filed on Mar. 18, 2021, granted, now 11,664,444.
Claims priority of provisional application 63/031,127, filed on May 28, 2020.
Prior Publication US 2023/0268427 A1, Aug. 24, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/31055 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for making a semiconductor device, comprising:
forming a first gate stack over a first fin;
forming a first gate spacer extending along a side of the first gate stack, the first gate spacer comprising a first dielectric material;
forming a second gate spacer over the first gate spacer, the second gate spacer comprising silicon germanium;
forming a third gate spacer over the second gate spacer, the third gate spacer comprising a second dielectric material;
forming a source/drain region adjacent the third gate spacer;
depositing an interlayer dielectric (ILD) over the source/drain region, the ILD comprising a third dielectric material; and
removing at least a portion of the second gate spacer to form a void, while exposing a top surface of the ILD,
wherein the step of removing at least a portion of the second gate spacer leaves the first gate spacer, the third gate spacer, and the ILD intact.