US 12,068,396 B2
Parasitic capacitance reduction
Jia-Heng Wang, Hsinchu (TW); Chun-Han Chen, Changhua County (TW); I-Wen Wu, Hsinchu (TW); Chen-Ming Lee, Taoyuan County (TW); Fu-Kai Yang, Hsinchu (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 24, 2023, as Appl. No. 18/357,307.
Application 18/357,307 is a division of application No. 17/717,777, filed on Apr. 11, 2022, granted, now 11,757,022.
Application 17/717,777 is a division of application No. 17/085,032, filed on Oct. 30, 2020, granted, now 11,302,802, issued on Apr. 12, 2022.
Claims priority of provisional application 62/978,593, filed on Feb. 19, 2020.
Prior Publication US 2023/0402531 A1, Dec. 14, 2023
Int. Cl. H01L 29/76 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/32136 (2013.01); H01L 21/823431 (2013.01); H01L 29/0653 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first fin structure and a second fin structure arising from a substrate;
an isolation feature disposed between the first fin structure and the second fin structure;
a first epitaxial source/drain feature disposed over the first fin structure;
a second epitaxial source/drain feature disposed over the second fin structure;
a contact etch stop layer (CESL) disposed over the isolation feature;
an interlayer dielectric (ILD) layer over the CESL; and
a source/drain contact extending through the CESL and the ILD layer to electrically couple to first epitaxial source/drain feature and the second epitaxial source/drain feature,
wherein a portion of the source/drain contact extends between the first epitaxial source/drain feature and the second epitaxial source/drain feature,
wherein a bottom surface of the first epitaxial source/drain feature is lower than a bottom surface of the portion of the source/drain contact that extends between the first epitaxial source/drain feature and the second epitaxial source/drain feature.