US 12,068,394 B2
Semiconductor device and manufacturing method thereof
Chia-Wei Chang, Taichung (TW); Chiung Wen Hsu, Tainan (TW); and Yu-Ting Weng, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 3, 2021, as Appl. No. 17/306,120.
Application 16/544,826 is a division of application No. 15/725,710, filed on Oct. 5, 2017, granted, now 10,388,763, issued on Aug. 20, 2019.
Application 17/306,120 is a continuation of application No. 16/544,826, filed on Aug. 19, 2019, granted, now 10,998,427, issued on May 4, 2021.
Claims priority of provisional application 62/434,819, filed on Dec. 15, 2016.
Prior Publication US 2021/0257484 A1, Aug. 19, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/3085 (2013.01); H01L 21/31116 (2013.01); H01L 21/76232 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a fin structure protruding from an isolation insulating layer disposed over the substrate;
a gate insulating layer covering a channel region formed of the fin structure; and
a gate electrode layer covering the gate insulating layer;
wherein the fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate,
the neck portion has an arcuate surface,
an angle θ1 between a side surface of the bottom portion and a horizontal plane is an acute angle,
an angle θ3 between a side surface of the top portion and a horizontal plane is substantially a right angle,
a width of an uppermost portion of the fin structure is greater than a width of a narrowest portion of the neck portion,
the narrowest portion of the neck portion is below a lowermost portion of the gate electrode layer along a direction in which the fin structure protrudes from the substrate,
a width of the top portion decreases along a direction in which the fin structure protrudes from the substrate.