US 12,068,386 B2
Semiconductor devices and methods of forming the same
Hsin-Yi Lee, Hsinchu (TW); Cheng-Lung Hung, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 12, 2023, as Appl. No. 18/316,419.
Application 18/316,419 is a continuation of application No. 17/189,779, filed on Mar. 2, 2021, granted, now 11,688,786.
Claims priority of provisional application 63/140,288, filed on Jan. 22, 2021.
Prior Publication US 2023/0282725 A1, Sep. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/4908 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first transistor comprising:
a first channel region;
a first gate dielectric on the first channel region; and
a first gate electrode on the first gate dielectric, the first gate electrode comprising a first p-type work function tuning layer, the first p-type work function tuning layer comprising fluorine and aluminum; and
a second transistor comprising:
a second channel region;
a second gate dielectric on the second channel region; and
a second gate electrode on the second gate dielectric, the second gate electrode comprising a n-type work function tuning layer, the n-type work function tuning layer having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function tuning layer.