US 12,068,381 B2
Transistor, ternary inverter including same, and transistor manufacturing method
Kyung Rok Kim, Ulsan (KR); Ji Won Chang, Ulsan (KR); Jae Won Jeong, Ulsan (KR); Youngeun Choi, Ulsan (KR); and Wooseok Kim, Ulsan (KR)
Assigned to UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), (KR)
Appl. No. 17/636,026
Filed by UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), Ulsan (KR)
PCT Filed Nov. 19, 2020, PCT No. PCT/KR2020/016416
§ 371(c)(1), (2) Date Feb. 16, 2022,
PCT Pub. No. WO2021/101289, PCT Pub. Date May 27, 2021.
Claims priority of application No. 10-2019-0149120 (KR), filed on Nov. 19, 2019; application No. 10-2019-0149121 (KR), filed on Nov. 19, 2019; application No. 10-2020-0070486 (KR), filed on Jun. 10, 2020; and application No. 10-2020-0087156 (KR), filed on Jul. 14, 2020.
Prior Publication US 2022/0285507 A1, Sep. 8, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H03K 19/0948 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H03K 19/0948 (2013.01)] 32 Claims
OG exemplary drawing
 
1. A transistor comprising:
a substrate;
a pair of constant current forming regions provided in the substrate;
a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and
a gate structure provided between the pair of source/drain regions,
wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions,
wherein the substrate and the pair of constant current forming regions have a first conductivity type,
the pair of source/drain regions have a second conductivity type different from the first conductivity type, and
a doping concentration of the pair of constant current forming regions is higher than a doping concentration of the substrate.