US 12,068,374 B2
Method of dopant deactivation underneath gate
Dhanyakumar Mahaveer Sathaiya, Hsinchu (TW); Kai-Chieh Yang, Hsinchu (TW); Ken-Ichi Goto, Hsinchu (TW); Wei-Hao Wu, Hsinchu (TW); Yuan-Chen Sun, Hsinchu (TW); and Zhiqiang Wu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 13, 2021, as Appl. No. 17/229,206.
Application 17/229,206 is a division of application No. 16/202,796, filed on Nov. 28, 2018, granted, now 10,985,246.
Application 14/855,477 is a division of application No. 13/434,630, filed on Mar. 29, 2012, granted, now 9,153,662, issued on Oct. 6, 2015.
Application 16/202,796 is a continuation of application No. 14/855,477, filed on Sep. 16, 2015, granted, now 10,157,985, issued on Dec. 18, 2018.
Prior Publication US 2021/0234003 A1, Jul. 29, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01)
CPC H01L 29/1041 (2013.01) [H01L 29/1045 (2013.01); H01L 29/1608 (2013.01); H01L 29/66537 (2013.01); H01L 29/66651 (2013.01); H01L 29/7833 (2013.01); H01L 21/26506 (2013.01); H01L 21/2658 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a device on a substrate, comprising:
doping a channel region of the device with dopants;
growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region; and
forming a gate structure over the deactivated region.