US 12,068,373 B2
Semiconductor device and fabrication method thereof
Han-Chin Chiu, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Appl. No. 17/042,915
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
PCT Filed Aug. 7, 2020, PCT No. PCT/CN2020/107647
§ 371(c)(1), (2) Date Sep. 29, 2020,
PCT Pub. No. WO2022/027536, PCT Pub. Date Feb. 10, 2022.
Prior Publication US 2022/0376050 A1, Nov. 24, 2022
Int. Cl. H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/1029 (2013.01) [H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first nitride semiconductor layer on the substrate;
a second nitride semiconductor layer on the first nitride semiconductor layer and having a bandgap greater than a bandgap of the first nitride semiconductor layer, the second nitride semiconductor layer having a first area and a second area, and the second nitride semiconductor layer having a single crystal structure; and
an electrode in contact with the first area,
wherein a first concentration of an element in the first area is less than a second concentration of the element in the second area, the second area comprises the element gradientially distributed along a direction toward the first nitride semiconductor layer, and wherein the single crystal structure in the first area takes over a crystal structure in the first nitride semiconductor layer.