US 12,068,365 B2
Semiconductor device including guard rings
Seulki Hong, Seoul (KR); Hyungjong Lee, Osan-si (KR); Moongì Cho, Seoul (KR); Myungsoo Noh, Suwon-si (KR); Sunghwan Bae, Seoul (KR); and Jeonglim Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 30, 2020, as Appl. No. 17/039,333.
Claims priority of application No. 10-2020-0019003 (KR), filed on Feb. 17, 2020.
Prior Publication US 2021/0257449 A1, Aug. 19, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/0619 (2013.01) [H01L 27/0886 (2013.01); H01L 29/0649 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a guard ring disposed on the substrate and adjacent to an edge of the substrate;
an integrated circuit structure surrounded by the guard ring and disposed on the substrate; and
an insulating material structure disposed on a side surface of the guard ring,
wherein the integrated circuit structure includes a circuit active fin disposed on the substrate, a gate structure intersecting the circuit active fin, a source or drain region on the circuit active fin adjacent to a side surface of the gate structure, a circuit contact structure disposed on the source or drain region, and a circuit interconnection structure disposed on the circuit contact structure,
wherein the guard ring includes a plurality of guard active structures on the substrate, a plurality of guard contact structures disposed on each of the plurality of guard active structures, and a guard interconnection structure disposed on a pair of guard contact structures adjacent to each other, among the plurality of guard contact structures,
wherein the source or drain region is disposed between the circuit contact structure and the circuit active fin,
wherein each of the plurality of guard active structures includes a plurality of guard active fins spaced apart from each other,
wherein in each of the plurality of guard active structures, upper surfaces of a first group of the plurality of guard active fins at least partially overlap the insulating material structure in a vertical direction, and upper surfaces of a second group of the plurality of guard active fins are in contact with the plurality of guard contact structures,
wherein the second group of the plurality of guard active fins are disposed in between the first group of the plurality of guard active fins,
wherein an upper surface of a guard active fin in the first group is disposed on a higher level than an upper surface of a guard active fin in the second group, and
wherein the vertical direction is perpendicular to an upper surface of the substrate.