US 12,068,360 B2
Capacitor, semiconductor device including the same, and method of fabricating capacitor
Jeonggyu Song, Suwon-si (KR); Younsoo Kim, Yongin-si (KR); and Jaeho Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 27, 2023, as Appl. No. 18/175,095.
Application 18/175,095 is a continuation of application No. 17/060,911, filed on Oct. 1, 2020, granted, now 11,594,592, issued on Feb. 28, 2023.
Claims priority of application No. 10-2020-0023706 (KR), filed on Feb. 26, 2020.
Prior Publication US 2023/0223426 A1, Jul. 13, 2023
Int. Cl. H01L 29/00 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 28/40 (2013.01) [H01L 28/75 (2013.01); H10B 12/31 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a bottom electrode;
a top electrode over the bottom electrode;
a dielectric film between the bottom electrode and the top electrode; and
a doped Al2O3 film between the top electrode and the dielectric film,
the doped Al2O3 film including a first dopant in the doped Al2O3 film,
the doped Al2O3 film further comprises a second dopant that is different from the first dopant,
an oxide including a same element as the first dopant having a higher dielectric constant than a dielectric constant of Al2O3,
an oxide of the first dopant having a higher dielectric constant than the dielectric constant of Al2O3, and
an oxide comprising a same element as the second dopant having a higher dielectric constant than the dielectric constant of Al2O3.