US 12,068,359 B2
Semiconductor devices and methods of fabricating a semiconductor device
Lawrence Selvaraj Susai, Singapore (SG); Chor Shu Cheng, Singapore (SG); Yong Chau Ng, Singapore (SG); Lulu Peng, Singapore (SG); Zishan Ali Syed Mohammed, Singapore (SG); and Nuraziz Yosokumoro, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Oct. 15, 2019, as Appl. No. 16/601,632.
Prior Publication US 2021/0111243 A1, Apr. 15, 2021
Int. Cl. H01L 49/02 (2006.01); H01L 23/31 (2006.01); H01L 23/64 (2006.01)
CPC H01L 28/10 (2013.01) [H01L 23/3157 (2013.01); H01L 23/645 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a protective region provided over the substrate, the protective region comprising a protective material resistant to etching by a chemical solution; and
a core structure enclosed by the protective region, the core structure comprising a core material etchable by the chemical solutions
wherein the core structure has a first side and a second side opposite to the first side, the first side being closer to the substrate than the second side, and the core structure being narrowest at the first side of the core structure, and
wherein the core structure is widest at a plane between the first side and the second side.