US 12,068,357 B2
Light emitting diode and preparation method therefor
Wenrong Zhuang, Dongguan (CN); Ming Sun, Dongguan (CN); Xiaochao Fu, Dongguan (CN); and Jingquan Lu, Dongguan (CN)
Assigned to HCP TECHNOLOGY CO., LTD., Dongguan (CN)
Appl. No. 17/442,278
Filed by HCP TECHNOLOGY CO., LTD., Dongguan (CN)
PCT Filed Mar. 3, 2020, PCT No. PCT/CN2020/077588
§ 371(c)(1), (2) Date Sep. 23, 2021,
PCT Pub. No. WO2021/174412, PCT Pub. Date Sep. 10, 2021.
Prior Publication US 2022/0399397 A1, Dec. 15, 2022
Int. Cl. H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/58 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/58 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising:
a first-type layer, which comprises a first-type gallium nitride;
a light emitting layer, which is located on the first-type layer and comprises a quantum dot;
a second-type layer, which is located on the light emitting layer and comprises a second-type gallium nitride;
an electrode layer, which is located on the second-type layer;
a black matrix, which is located between the first-type layer and the second-type layer and comprises a first window, wherein the light emitting layer is located within the first window; and
an insulating layer, which covers an upper surface of the electrode layer, a side surface of the electrode layer, and a side surface of the second-type layer.