US 12,068,350 B2
Complementary metal-oxide semiconductor (CMOS) image sensor
Seokha Lee, Hwaseong-si (KR); and Junetaeg Lee, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 22, 2021, as Appl. No. 17/382,777.
Claims priority of application No. 10-2020-0168937 (KR), filed on Dec. 4, 2020.
Prior Publication US 2022/0181376 A1, Jun. 9, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 25/065 (2023.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14634 (2013.01); H01L 25/0657 (2013.01); H01L 27/1463 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a sensor chip comprising a first substrate and a first interconnection layer, the first substrate including a first surface and a second surface opposite to the first surface, and the first interconnection layer being disposed on the first surface of the first substrate;
a logic chip comprising a second substrate and a second interconnection layer, the second interconnection layer being disposed between the first interconnection layer and the second substrate;
a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer; and
a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer,
wherein the first interconnection layer comprises a first interlayer insulating layer and a first interconnection pattern disposed on the first interlayer insulating layer,
wherein the second interconnection layer comprises a second interlayer insulating layer and a second interconnection pattern disposed on the second interlayer insulating layer,
wherein the through-hole includes a first trench and a second trench, the first trench and the second trench respectively extending from a bottom surface of two end portions of the through-hole toward the second interconnection layer,
wherein a bottom surface of the first trench and a bottom surface of the second trench are in contact with the second interconnection pattern,
wherein a bottom surface of the through-hole between the first trench and the second trench is in contact with the first interconnection pattern,
wherein the first interconnection pattern includes at least one first opening in a plan view, and
wherein a portion of the second interconnection pattern is disposed on the at least one first opening in the plan view and includes at least one second opening in the plan view.