US 12,068,349 B2
Method of manufacturing solid-state image sensor, solid-state image sensor, and camera
Toshihiro Shoyama, Kawasaki (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Oct. 3, 2019, as Appl. No. 16/592,038.
Application 16/592,038 is a continuation of application No. 14/721,150, filed on May 26, 2015, granted, now 10,475,841.
Claims priority of application No. 2014-114367 (JP), filed on Jun. 2, 2014.
Prior Publication US 2020/0035740 A1, Jan. 30, 2020
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 27/1463 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of manufacturing an image sensor comprising a pixel part that includes a plurality of pixels, the method comprising the steps of:
forming, on a photoelectric conversion element, a first transistor and a second transistor that are included in the pixel part, a first insulating film made of a nitrogen-containing silicon compound;
forming an opening in the first insulating film, by removing a portion of the first insulating film, such that the portion is positioned above at least the second transistor;
forming, on the first insulating film, a second insulating film made of an oxygen-containing silicon compound so as to cover the first transistor, a side surface of the opening of the first insulating film, and the second transistor;
forming, on the second insulating film, an interlayer dielectric film so as to cover the first transistor and the second transistor, such that an insulating structure including the first insulating film, the second insulating film and the interlayer dielectric film is formed;
forming a contact hole in the insulating structure by etching at least part of the insulating structure on the first transistor; and
forming, in the contact plug, a contact plug connected to the first transistor.