US 12,068,340 B2
Image sensor comprising an inter-pixel overflow (IPO) barrier and electronic system including the same
Sanghyuck Moon, Gwangju (KR); Kyungho Lee, Suwon-si (KR); Seungjoon Lee, Busan (KR); Minji Jung, Hwaseong-si (KR); and Masato Fujita, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 11, 2021, as Appl. No. 17/345,284.
Claims priority of application No. 10-2020-0128267 (KR), filed on Oct. 5, 2020.
Prior Publication US 2022/0109012 A1, Apr. 7, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1461 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a substrate having a sensing area;
a floating diffusion region arranged in the sensing area;
a plurality of photodiodes arranged around the floating diffusion region in the sensing area, wherein each of the plurality of photodiodes includes a first semiconductor region and a second semiconductor region; and
an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, wherein the IPO barrier includes a third semiconductor region in contact with the second semiconductor region of each of the plurality of photodiodes, the third semiconductor region having a same conductivity type as the second semiconductor region of each of the plurality of photodiodes, and the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.