US 12,068,337 B2
Image sensor
Kook-tae Kim, Hwaseong-si (KR); Jin-gyun Kim, Hwaseong-si (KR); and Soo-jin Hong, Guri-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 9, 2023, as Appl. No. 18/144,969.
Application 18/144,969 is a continuation of application No. 17/519,701, filed on Nov. 5, 2021, granted, now 11,652,113.
Application 17/519,701 is a continuation of application No. 16/451,412, filed on Jun. 25, 2019, granted, now 11,239,269, issued on Feb. 1, 2022.
Claims priority of application No. 10-2018-0135331 (KR), filed on Nov. 6, 2018.
Prior Publication US 2023/0275104 A1, Aug. 31, 2023
Int. Cl. H01L 27/146 (2006.01); H04N 25/40 (2023.01)
CPC H01L 27/14605 (2013.01) [H04N 25/40 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite the first surface;
a transmission gate in a gate trench extending from the first surface of the semiconductor substrate toward an inside of the semiconductor substrate; and
a pixel isolation film in a pixel trench penetrating through the semiconductor substrate, the pixel isolation film defining active pixels in the semiconductor substrate,
wherein the pixel isolation film includes:
an insulating liner on an inner wall of the pixel trench;
a buried layer on the insulating liner and filling a portion of the pixel trench; and
a buried insulating layer disposed in a remaining portion of the pixel trench, and
wherein a portion of the insulating liner is disposed between a sidewall of the buried insulating layer and the inner wall of the pixel trench.