US 12,068,327 B2
Method for fabricating mask, method for fabricating semiconductor device using the mask, and the semiconductor device fabricated using the mask
Myoung-Ho Kang, Suwon-si (KR); Yong-Ah Kim, Seongnam-si (KR); Dong Hyo Park, Seoul (KR); Seong-Yul Park, Hwaseong-si (KR); and Chang Hyeon Lee, Incheon (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 10, 2021, as Appl. No. 17/454,303.
Claims priority of application No. 10-2021-0033976 (KR), filed on Mar. 16, 2021.
Prior Publication US 2022/0302176 A1, Sep. 22, 2022
Int. Cl. H01L 27/12 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1222 (2013.01) [G03F 7/70441 (2013.01); H01L 29/41775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate including a first region, a second region, and a connecting region placed between the first region and the second region;
a plurality of first multi-channel active patterns placed in the first region of the substrate;
a plurality of second multi-channel active patterns placed in the second region of the substrate;
a first connecting fin type pattern which is placed in the connecting region of the substrate and extends from the first region to the second region in a first direction; and
a field insulating film which is placed on the substrate and covers an upper surface of the first connecting fin type pattern,
wherein a width of the first connecting fin type pattern in a second direction decreases and then increases as it goes away from the first region, and
the first direction is perpendicular to the second direction.