CPC H01L 27/0924 (2013.01) [H01L 23/528 (2013.01); H01L 29/0665 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a substrate including a first power supply region and a second power supply region, and a cell region that extends between the first power supply region and the second power supply region;
a first active region and a second active region extending side-by-side in a first direction, within the cell region;
a first power supply wiring extending in the first direction within the first power supply region;
a first source/drain contact which connects the first active region and the second active region; and
a second source/drain contact which connects the first active region and the first power supply wiring;
wherein the first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region;
wherein the second source/drain contact includes a second recess portion disposed inside the first power supply region; and
wherein a lowermost surface of the first recess portion is higher than a lowermost surface of the second recess portion, relative to an upper surface of the substrate.
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