US 12,068,320 B2
Gate isolation for multigate device
Kuan-Ting Pan, Taipei (TW); Kuo-Cheng Chiang, Zhubei (TW); Shi Ning Ju, Hsinchu (TW); Yi-Ruei Jhan, Keelung (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTORMANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Sep. 3, 2021, as Appl. No. 17/466,569.
Claims priority of provisional application 63/167,899, filed on Mar. 30, 2021.
Prior Publication US 2022/0320088 A1, Oct. 6, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/092 (2013.01) [H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823878 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first multigate device having:
a first channel layer disposed between first source/drain features, and
a first metal gate that surrounds the first channel layer;
a second multigate device having:
a second channel layer disposed between second source/drain features, and
a second metal gate that surrounds the second channel layer; and
a gate isolation fin disposed between and separating the first metal gate and the second metal gate, wherein the gate isolation fin includes a first dielectric feature disposed over a second dielectric feature, the first dielectric feature having:
a first dielectric layer having a first dielectric constant, and
a second dielectric layer that surrounds the first dielectric layer, wherein the second dielectric layer has a second dielectric constant that is greater than the first dielectric constant; and
the second dielectric feature having:
a third dielectric layer having a third dielectric constant, and
a fourth dielectric layer that wraps the third dielectric layer, wherein the fourth dielectric layer has a fourth dielectric constant that is less than the second dielectric constant.