US 12,068,306 B2
Integrated circuit device
Chung-Hui Chen, Hsinchu (TW); Tzu-Ching Chang, Hsinchu (TW); and Cheng-Hsiang Hsieh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 4, 2023, as Appl. No. 18/312,219.
Application 18/312,219 is a continuation of application No. 17/189,908, filed on Mar. 2, 2021, granted, now 11,676,957.
Claims priority of provisional application 63/031,218, filed on May 28, 2020.
Prior Publication US 2023/0275080 A1, Aug. 31, 2023
Int. Cl. H01L 27/02 (2006.01); G06F 30/3953 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/3953 (2020.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device, comprising:
a substrate having opposite first and second sides;
a first transistor and a second transistor over the first side of the substrate;
a first conductive pattern over the first side of the substrate, and electrically coupling a first terminal of the first transistor to a second terminal of the second transistor; and
a second conductive pattern under the second side of the substrate, and electrically coupling the first terminal of the first transistor to the second terminal of the second transistor.