US 12,068,295 B2
Deep partition power delivery with deep trench capacitor
Chen-Hua Yu, Hsinchu (TW); Chung-Hao Tsai, Huatan Township (TW); Chuei-Tang Wang, Taichung (TW); and Chieh-Yen Chen, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/356,808.
Application 18/356,808 is a continuation of application No. 17/232,325, filed on Apr. 16, 2021, granted, now 11,784,172.
Claims priority of provisional application 63/148,650, filed on Feb. 12, 2021.
Prior Publication US 2023/0369302 A1, Nov. 16, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 21/304 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01)
CPC H01L 25/16 (2013.01) [H01L 21/304 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1434 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a device die comprising:
a plurality of low-k dielectric layers;
dual damascene structures in the plurality of low-k dielectric layers, wherein the dual damascene structures comprise metal lines and vias under the metal lines;
a first non-low-k dielectric layer over and contacting a top low-k dielectric layer of the plurality of low-k dielectric layers; and
a first bond pad and a second bond pad in the first non-low-k dielectric layer;
a capacitor die comprising:
a capacitor;
a second non-low-k dielectric layer; and
a third bond pad and a fourth bond pad in the second non-low-k dielectric layer and electrically connecting to two terminals of the capacitor, wherein the third bond pad and the fourth bond pad are bonded to the first bond pad and the second bond pad, respectively;
a plurality of aluminum-containing pads over the capacitor die, wherein the plurality of aluminum-containing pads are electrically coupled to the device die; and
a polymer layer over the aluminum-containing pad.