US 12,068,286 B2
Device with embedded high-bandwidth, high-capacity memory using wafer bonding
Khandker Nazrul Quader, Santa Clara, CA (US); Robert Norman, Pendleton, OR (US); Frank Sai-keung Lee, San Jose, CA (US); Christopher J. Petti, Mountain View, CA (US); Scott Brad Herner, Portland, OR (US); Siu Lung Chan, San Jose, CA (US); Sayeef Salahuddin, Walnut Creek, CA (US); Mehrdad Mofidi, San Jose, CA (US); and Eli Harari, Saratoga, CA (US)
Assigned to SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed by SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed on Apr. 24, 2023, as Appl. No. 18/138,270.
Application 18/138,270 is a division of application No. 16/776,279, filed on Jan. 29, 2020, granted, now 11,670,620.
Claims priority of provisional application 62/843,733, filed on May 6, 2019.
Claims priority of provisional application 62/803,689, filed on Feb. 11, 2019.
Claims priority of provisional application 62/798,673, filed on Jan. 30, 2019.
Prior Publication US 2023/0260969 A1, Aug. 17, 2023
Int. Cl. H01L 25/065 (2023.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G06F 12/0802 (2016.01); G06N 3/02 (2006.01); H01L 25/00 (2006.01); G11C 16/04 (2006.01)
CPC H01L 25/0657 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G06F 12/0802 (2013.01); G06N 3/02 (2013.01); H01L 25/50 (2013.01); G06F 2212/60 (2013.01); G06F 2212/72 (2013.01); G11C 16/0483 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01)] 37 Claims
OG exemplary drawing
 
1. A method for refreshing a quasi-volatile memory, comprising:
dividing the quasi-volatile memory into a plurality of refresh zones;
providing a refresh table comprising an activity record for each refresh zone indicating a status regarding data in the refresh zone, the status having one of a first value and a second value; and
refreshing the data in the refresh zone only when the status has the first value.