US 12,068,271 B2
Semiconductor device structure and methods of forming the same
Hsin-Chi Chen, Tainan (TW); Hsun-Ying Huang, Tainan (TW); Chih-Ming Lee, Tainan (TW); Shang-Yen Wu, Tainan (TW); Chih-An Yang, Tainan (TW); Hung-Wei Ho, Kaohsiung (TW); Chao-Ching Chang, Kaohsiung (TW); and Tsung-Wei Huang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTORMANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 23, 2023, as Appl. No. 18/225,134.
Application 17/841,213 is a division of application No. 16/917,640, filed on Jun. 30, 2020, granted, now 11,373,971, issued on Jun. 28, 2022.
Application 18/225,134 is a continuation of application No. 17/841,213, filed on Jun. 15, 2022, granted, now 11,756,913.
Prior Publication US 2023/0378115 A1, Nov. 23, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/488 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/488 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a bonding pad disposed over a substrate;
a first conductive feature disposed adjacent the bonding pad, wherein a center portion of the bonding pad and the first conductive feature are a first distance apart, an edge portion of the bonding pad and the first conductive feature are a second distance apart, and the first distance is smaller than the second distance; and
a passivation layer disposed over the bonding pad and the first conductive feature, wherein the passivation layer comprises:
a first passivation sublayer comprising a first dielectric material;
a second passivation sublayer disposed over the first passivation sublayer, the second passivation sublayer comprising a second dielectric material different from the first dielectric material; and
a third passivation sublayer disposed over the second passivation sublayer.