US 12,068,254 B2
Interconnection structure and methods of forming the same
Shu-Wei Li, Hsinchu (TW); Yu-Chen Chan, Taichung (TW); Shin-Yi Yang, New Taipei (TW); Ming-Han Lee, Taipei (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 30, 2023, as Appl. No. 18/141,422.
Application 18/141,422 is a division of application No. 17/314,269, filed on May 7, 2021, granted, now 11,640,940.
Prior Publication US 2023/0268274 A1, Aug. 24, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/53276 (2013.01) [H01L 21/76837 (2013.01); H01L 21/76885 (2013.01)] 20 Claims
OG exemplary drawing
 
19. An interconnection structure, comprising:
a dielectric material disposed over one or more devices; and
a conductive layer disposed adjacent the dielectric material, wherein the conductive layer comprises a plurality of graphene layers intercalated with a material and an interface portion in contact with the dielectric material, and the interface portion includes a metal disposed between adjacent graphene layers of the plurality of graphene layers, wherein an amount of the metal decreases in a direction away from the dielectric material, and the material is different from the metal.