US 12,068,253 B2
Semiconductor structure with two-dimensional conductive structures
Shu-Wei Li, Hsinchu (TW); Yu-Chen Chan, Taichung (TW); Meng-Pei Lu, Hsinchu (TW); Shin-Yi Yang, New Taipei (TW); and Ming-Han Lee, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 6, 2021, as Appl. No. 17/395,915.
Prior Publication US 2023/0037554 A1, Feb. 9, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/53276 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 23/5328 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a plurality of two-dimensional (2D) conductive structures;
an isolation structure separating the 2D conductive structures;
a dielectric structure longitudinally stacked on the 2D conductive structures and the isolation structure; and
at least one interconnect structure disposed in the dielectric structure and extending along an interface between one of the 2D conductive structures and the isolation structure, so that the interconnect structure partially contacts the one of the 2D conductive structures and partially contacts the isolation structure,
wherein the interconnect structure includes a bottom part disposed between the one of the 2D conductive structures and the isolation structure,
wherein a top of each of the 2D conductive structures and a top of the isolation structure are coplanar, and
wherein the bottom part of the interconnect structure has a tapered vertical cross sectional shape.