CPC H01L 23/5226 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 51/40 (2023.02)] | 20 Claims |
1. A memory device, comprising:
a stacked structure comprising a plurality of memory cells;
first flights of steps disposed at an end of the stacked structure along a first direction; and
second flights of steps adjacent to the first flights of steps disposed at the end of the stacked structure along the first direction,
wherein the first flights of steps and the second flights of steps comprise first portions and second portions alternately disposed along the first direction,
the second portions are wider than the first portions along a second direction.
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