US 12,068,243 B2
Semiconductor storage device and method for manufacturing the same
Ryota Suzuki, Yokkaichi Mie (JP); Ken Komiya, Nagoya Aichi (JP); and Katsuyuki Kitamoto, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Sep. 3, 2021, as Appl. No. 17/466,807.
Claims priority of application No. 2021-049444 (JP), filed on Mar. 24, 2021.
Prior Publication US 2022/0310509 A1, Sep. 29, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H01L 2221/1063 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor storage device, comprising:
a first wiring layer;
a first insulating layer on the first wiring layer;
a second wiring layer on the first insulating layer;
a second insulating layer on the second wiring layer;
a third wiring layer on the second insulating layer; and
a first pillar that passes through the first, second, and third wiring layers and the first and second insulating layers along a first direction and includes a first semiconductor layer, wherein
a first distance between a side surface of the first wiring layer facing the first pillar and a side surface of the first insulating layer facing the first pillar in a second direction perpendicular to the first direction is greater than a second distance between a side surface of the second wiring layer facing the first pillar and a side surface of the second insulating layer facing the first pillar in the second direction and a third distance between the side surface of the second insulating layer and a side surface of the third wiring layer facing the first pillar in the second direction.