US 12,068,217 B2
Frame member with a porous material between a semiconductor module and heat sink
Takashi Nishimura, Tokyo (JP); and Hiroki Shiota, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/612,218
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jul. 26, 2019, PCT No. PCT/JP2019/029486
§ 371(c)(1), (2) Date Nov. 18, 2021,
PCT Pub. No. WO2021/019614, PCT Pub. Date Feb. 4, 2021.
Prior Publication US 2022/0310478 A1, Sep. 29, 2022
Int. Cl. H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H02P 27/08 (2006.01)
CPC H01L 23/3733 (2013.01) [H01L 21/481 (2013.01); H01L 21/4871 (2013.01); H01L 23/16 (2013.01); H01L 23/3121 (2013.01); H01L 23/367 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/84 (2013.01); H01L 2924/181 (2013.01); H02P 27/08 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor module;
an insulating resin layer bonded to the semiconductor module and containing a first resin;
a frame member disposed to surround the insulating resin layer and including a porous material; and
a heat sink sandwiching the insulating resin layer and the frame member between the semiconductor module and the heat sink, wherein
the frame member is compressed in a state of being sandwiched between the semiconductor module and the heat sink,
the insulating resin layer is filled in a region surrounded by the semiconductor module, the heat sink, and the frame member, and
the first resin enters a pore of the porous material.