US 12,068,204 B2
Methods of forming epitaxial structures in fin-like field effect transistors
Feng-Ching Chu, Pingtung County (TW); Wei-Yang Lee, Taipei (TW); Feng-Cheng Yang, Hsinchu County (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 26, 2023, as Appl. No. 18/359,254.
Application 16/696,121 is a division of application No. 15/939,647, filed on Mar. 29, 2018, granted, now 10,497,628, issued on Dec. 3, 2019.
Application 18/359,254 is a continuation of application No. 17/411,937, filed on Aug. 25, 2021, granted, now 11,810,825.
Application 17/411,937 is a continuation of application No. 16/696,121, filed on Nov. 26, 2019, granted, now 11,107,735, issued on Aug. 31, 2021.
Claims priority of provisional application 62/589,664, filed on Nov. 22, 2017.
Prior Publication US 2023/0377987 A1, Nov. 23, 2023
Int. Cl. H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first fin structure protruding from a semiconductor substrate;
a second fin structure protruding from the semiconductor substrate and adjacent to the first fin structure, wherein a top surface of the second fin structure is above a top surface of the first fin structure;
a first source/drain feature over the first fin structure;
a second source/drain feature over the second fin structure; and
an isolation structure between and separating the first fin structure from the second fin structure, wherein the isolation structure includes a first portion closer to the first fin structure, a second portion closer to the second fin structure, and a middle portion between the first and second portions, and the first and second portions have top surfaces that extends upwards to a top surface of the middle portion.