CPC H01L 21/823814 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first fin structure protruding from a semiconductor substrate;
a second fin structure protruding from the semiconductor substrate and adjacent to the first fin structure, wherein a top surface of the second fin structure is above a top surface of the first fin structure;
a first source/drain feature over the first fin structure;
a second source/drain feature over the second fin structure; and
an isolation structure between and separating the first fin structure from the second fin structure, wherein the isolation structure includes a first portion closer to the first fin structure, a second portion closer to the second fin structure, and a middle portion between the first and second portions, and the first and second portions have top surfaces that extends upwards to a top surface of the middle portion.
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