US 12,068,195 B2
Metal loss prevention using implantation
Li-Chieh Wu, Hsinchu (TW); Tang-Kuei Chang, Tainan (TW); Kuo-Hsiu Wei, Tainan (TW); Kei-Wei Chen, Tainan (TW); Ying-Lang Wang, Tien-Chung Village (TW); Su-Hao Liu, Jhongpu Township (TW); Kuo-Ju Chen, Taichung (TW); Liang-Yin Chen, Hsinchu (TW); Huicheng Chang, Tainan (TW); Ting-Kui Chang, New Taipei (TW); and Chia Hsuan Lee, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/330,466.
Application 16/556,360 is a division of application No. 15/993,768, filed on May 31, 2018, granted, now 10,643,892, issued on May 5, 2020.
Application 18/330,466 is a continuation of application No. 17/646,024, filed on Dec. 27, 2021, granted, now 11,710,659.
Application 17/646,024 is a continuation of application No. 16/556,360, filed on Aug. 30, 2019, granted, now 11,211,289, issued on Dec. 28, 2021.
Prior Publication US 2023/0317519 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3115 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76883 (2013.01) [H01L 21/76825 (2013.01); H01L 23/5226 (2013.01); H01L 21/31155 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 23/485 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a dielectric layer over a substrate, wherein the dielectric layer has a lower surface near the substrate and a top surface distal from the substrate; and
a conductive feature disposed through the dielectric layer, wherein a first sidewall and a second sidewall of the conductive feature are in direct contact with the dielectric layer in a cross-sectional view, wherein the conductive feature comprises a single material layer from the first sidewall to the second sidewall, wherein a concentration of an implant species at the top surface is greater than a concentration of the implant species at the lower surface.